A New Concept for MOSFETs

An international team of researchers has created a proof of concept that uses the deep- depletion regime in bulk-boron-doped diamond MOSFETs to increase hole channel carrier mobility

  • Credit: Institut NÉEL

    Left: Optical microscope image of the MOSCAPs and diamond deep depletion MOSFETs (D2MOSFETs) of this work. Top right: Scanning electron microscope image of a diamond D2MOSFET under electrical investigation. S: Source, G: Gate, D: Drain. Bottom right: D2MOSFET concept. The on-state of the transistor is ensured thanks to the accumulation or flat band regime. The high mobility channel is the boron-doped diamond epilayer. The off-state is achieved thanks to the deep depletion regime, which is stable only for wide bandgap semiconductors. For a gate voltage larger than a given threshold, the channel is closed because of the deeply and fully depleted layer under the gate.

WASHINGTON, D.C., October 26, 2017 -- Silicon has provided enormous benefits to the power electronics industry. But performance of silicon-based power electronics is nearing maximum capacity. 

Enter wide bandgap (WBG) semiconductors. Seen as significantly more energy-efficient, they have emerged as leading contenders in developing field-effect transistors (FETs) for next-generation power electronics. Such FET technology would benefit everything from power-grid distribution of renewable-energy sources to car and train engines. 

Diamond is largely recognized as the most ideal material in WBG development, owing to its su....

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